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1

Incomplete ionization in a semiconductor and its implications to device modeling

G Xiao, J Lee, J.J Liou, A Ortiz-Conde

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 148 KB

english, 1999

2

A review of DC extraction methods for MOSFET series resistance and mobility degradation model parameters

Ortiz-Conde, Adelmo, Sucre-González, Andrea, Zárate-Rincón, Fabián, Torres-Torres, Reydezel, Murphy-Arteaga, Roberto S., Liou, Juin J., García-Sánchez, Francisco J.

Journal:

Microelectronics Reliability

Year:

2017

Language:

english

File:

PDF, 3.31 MB

english, 2017

3

[IEEE 1994 Power Electronics Specialist Conference - PESC'94 - Taipei, Taiwan (20-25 June 1994)] Proceedings of 1994 Power Electronics Specialist Conference - PESC'94 - Steady state analysis and performance characteristics of the LLC-type parallel resonant converter

Batarseh, I., Liu, R., Ortiz-Conde, A., Yacoub, A., Siri, K.

Year:

1994

Language:

english

File:

PDF, 570 KB

english, 1994

4

Revisiting MOSFET threshold voltage extraction methods

Ortiz-Conde, Adelmo, García-Sánchez, Francisco J., Muci, Juan, Terán Barrios, Alberto, Liou, Juin J., Ho, Ching-Sung

Journal:

Microelectronics Reliability

Year:

2013

Language:

english

File:

PDF, 1.46 MB

english, 2013

5

A review of recent MOSFET threshold voltage extraction methods

A. Ortiz-Conde, F.J. Garcı́a Sánchez, J.J. Liou, A. Cerdeira, M. Estrada, Y. Yue

Journal:

Microelectronics Reliability

Year:

2002

Language:

english

File:

PDF, 275 KB

english, 2002

6

Anomalous leakage current in LPCVD PolySilicon MOSFET's

Fossum, J.G., Ortiz-Conde, A., Shichijo, H., Banerjee, S.K.

Journal:

IEEE Transactions on Electron Devices

Year:

1985

Language:

english

File:

PDF, 805 KB

english, 1985

7

Determination of trap cross-section in a-Si:H p-i-n diodes parameters using simulation and parameter extraction

Magali Estrada, Antonio Cerdeira, Adelmo Ortiz-Conde, Francisco Garcı́a

Journal:

Microelectronics Reliability

Year:

2001

Language:

english

File:

PDF, 229 KB

english, 2001

8

A new method to extract diode parameters under the presence of parasitic series and shunt resistance

J.C Ranuárez, A Ortiz-Conde, F.J Garcı́a Sánchez

Journal:

Microelectronics Reliability

Year:

2000

Language:

english

File:

PDF, 147 KB

english, 2000

9

New method to extract the model parameters of solar cells from the explicit analytic solutions of their illuminated I–V characteristics

Adelmo Ortiz-Conde, Francisco J. García Sánchez, Juan Muci

Journal:

Solar Energy Materials and Solar Cells

Year:

2006

Language:

english

File:

PDF, 191 KB

english, 2006

10

A new method for extracting the effective channel length of MOSFETs

A. Ortiz-Conde, J.J. Liou, F.J. Garcı́a Sánchez, E.Gouveia Fernandes, O.Montilla Castillo, M.D.Rofiqul Hassan, G. De Mercato

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 225 KB

english, 1998

11

On the extraction of the source and drain series resistances of MOSFETs

F.J. Garcı́a Sánchez, A. Ortiz-Conde, J.J. Liou

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 230 KB

english, 1999

12

Validation of bulk-charge effect parameter extraction in MOSFETs

F.J Garcı́a Sánchez, A Ortiz-Conde, J.A Salcedo, J Muci, M Estrada, A Cerdeira, J.J Liou, Y Yue

Journal:

Microelectronics Reliability

Year:

2000

Language:

english

File:

PDF, 168 KB

english, 2000

13

[IEEE 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. - Shangri-La's Rasa Sentosa Resort, Singapore (27 June-1July, 2005)] Proceedings of the 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. - Extraction of parameters and simulation of the hard breakdown I-V characteristics in ultrathin gate oxides

Miranda, E., Ortiz-Conde, A., Sanchez, F.J.G., Farkas, E.

Year:

2005

Language:

english

File:

PDF, 315 KB

english, 2005

14

Simple method for extracting the difference between the drain and source series resistances in MOSFETs

Ortiz-Conde, A., Wong, W., Liou, J.J., García Sánchez, F.J.

Journal:

Electronics Letters

Year:

1994

Language:

english

File:

PDF, 223 KB

english, 1994

15

Indirect fitting procedure to separate the effects of mobility degradation and source-and-drain resistance in MOSFET parameter extraction

Adelmo Ortiz-Conde, Francisco J. García-Sánchez, Juan Muci, Denise C. Lugo Muñoz, Álvaro D. Latorre Rey, Ching-Sung Ho, Juin J. Liou

Journal:

Microelectronics Reliability

Year:

2009

Language:

english

File:

PDF, 367 KB

english, 2009

16

Parameter extraction in polysilicon nanowire MOSFETs using new double integration-based procedure

A. Ortiz-Conde, A.D. Latorre Rey, W. Liu, W.-C. Chen, H.-C. Lin, J.J. Liou, J. Muci, F.J. García-Sánchez

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 976 KB

english, 2010

17

A unified look at the use of successive differentiation and integration in MOSFET model parameter extraction

García-Sánchez, Francisco J., Ortiz-Conde, Adelmo, Muci, Juan, Sucre-González, Andrea, Liou, Juin J.

Journal:

Microelectronics Reliability

Year:

2015

Language:

english

File:

PDF, 2.29 MB

english, 2015

18

A physics-based model for the substrate resistance of MOSFETs

X.F. Gao, J.J. Liou, A. Ortiz-Conde, J. Bernier, G. Croft

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 184 KB

english, 2002

19

A Review of Core Compact Models for Undoped Double-Gate SOI MOSFETs

Ortiz-Conde, A., Garcia-Sanchez, F. J., Muci, J., Malobabic, S., Liou, J. J.

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 288 KB

english, 2007

20

A continuous semi-empiric transfer characteristics model for surrounding gate undoped polysilicon nanowire MOSFETs

F.J. García-Sánchez, A.D. Latorre-Rey, W. Liu, W.-C. Chen, H.-C. Lin, J.J. Liou, J. Muci, A. Ortiz-Conde

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 613 KB

english, 2011

21

A review of diode and solar cell equivalent circuit model lumped parameter extraction procedures

Ortiz-Conde, Adelmo, García-Sánchez, Francisco, Muci, Juan, Sucre-González, Andrea

Journal:

Facta universitatis - series Electronics and Energetics

Year:

2014

Language:

english

File:

PDF, 1.12 MB

english, 2014

22

Integration-based approach to evaluate the sub-threshold slope of MOSFETs

Adelmo Ortiz-Conde, Francisco J. García-Sánchez, Juin J. Liou, Ching-Sung Ho

Journal:

Microelectronics Reliability

Year:

2010

Language:

english

File:

PDF, 366 KB

english, 2010

23

Threshold voltage extraction in Tunnel FETs

Ortiz-Conde, Adelmo, García-Sánchez, Francisco J., Muci, Juan, Sucre-González, Andrea, Martino, João Antonio, Agopian, Paula Ghedini Der, Claeys, Cor

Journal:

Solid-State Electronics

Year:

2014

Language:

english

File:

PDF, 1.58 MB

english, 2014

24

Generic complex-variable potential equation for the undoped asymmetric independent double-gate MOSFET

Adelmo Ortiz-Conde, Francisco J. García-Sánchez

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 1.01 MB

english, 2011

25

Influence of polysilicon-gate depletion on the subthreshold behavior of submicron MOSFETs

Juin J. Liou, R. Shireen, A. Ortiz-Conde, F.J. Garcı́a Sánchez, A. Cerdeira, X. Gao, Xuecheng Zou, C.S. Ho

Journal:

Microelectronics Reliability

Year:

2002

Language:

english

File:

PDF, 397 KB

english, 2002

26

The Effects of Space-Charge-Layer Thickness Modulation on Diffusion Capacitance

Liou, Juin J., Ortiz-Conde, Adelmo

Journal:

Japanese Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 348 KB

english, 1994

27

Parasitic series resistance-independent method for device-model parameter extraction

Garcia Sanchez, F.J., Ortiz-Conde, A., Liou, J.J.

Journal:

IEE Proceedings - Circuits Devices and Systems

Year:

1996

Language:

english

File:

PDF, 334 KB

english, 1996

28

[IEEE First International Caracas Conference on Devices, Circuits and Systems - Caracas, Venezuela (12-14 Dec. 1995)] Proceedings of First International Caracas Conference on Devices, Circuits and Systems - A model for reverse short-channel effects in MOSFETs

Narayanan, R., Ortiz-Conde, A., Liou, J.J., Golovanova, L., Wong, W., Garcia Sanchez, F.J.

Year:

1995

Language:

english

File:

PDF, 261 KB

english, 1995

29

Understanding threshold voltage in undoped-body MOSFETs: An appraisal of various criteria

F.J. Garcı́a Sánchez, A. Ortiz-Conde, J. Muci

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 289 KB

english, 2006

30

An explicit multi-exponential model for semiconductor junctions with series and shunt resistances

Denise Lugo-Muñoz, Juan Muci, Adelmo Ortiz-Conde, Francisco J. García-Sánchez, Michelly de Souza, Marcelo A. Pavanello

Journal:

Microelectronics Reliability

Year:

2011

Language:

english

File:

PDF, 623 KB

english, 2011

31

Unification of asymmetric DG, symmetric DG and bulk undoped-body MOSFET drain current

Adelmo Ortiz-Conde, Francisco J. García Sánchez

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 154 KB

english, 2006

32

Postbreakdown Current in MOS Structures: Extraction of Parameters Using the Integral Difference Function Method

Miranda, E., Ortiz-Conde, A., Garcia-Sanchez, F.J., Farkas-Sosa, E.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2006

Language:

english

File:

PDF, 308 KB

english, 2006

33

Rigorous analytic solution for the drain current of undoped symmetric dual-gate MOSFETs

Adelmo Ortiz-Conde, Francisco J. García Sánchez, Juan Muci

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 436 KB

english, 2005

34

[IEEE First International Caracas Conference on Devices, Circuits and Systems - Caracas, Venezuela (12-14 Dec. 1995)] Proceedings of First International Caracas Conference on Devices, Circuits and Systems - Eliminating parasitic resistances in parameter extraction of semiconductor device models

Garcia Sanchez, F.J., Ortiz-Conde, A., De Mercato, G., Liou, J.J., Recht, L.

Year:

1995

Language:

english

File:

PDF, 334 KB

english, 1995

35

Direct extraction of semiconductor device parameters using lateral optimization method

A Ortiz-Conde, Yuansheng Ma, J Thomson, E Santos, J.J Liou, F.J Garcı́a Sánchez, M Lei, J Finol, P Layman

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 207 KB

english, 1999

36

Relative Errors of Free-Carrier Density at Different Temperatures Calculated from Approximations for the Fermi-Dirac Integral

Y. Yue, J. J. Liou, A. Ortiz-conde

Year:

1995

File:

PDF, 320 KB

1995

37

A formula for the central potential’s maximum magnitude in arbitrarily doped symmetric double-gate MOSFETs

García-Sánchez, Francisco J., Ortiz-Conde, Adelmo

Journal:

Solid-State Electronics

Year:

2012

Language:

english

File:

PDF, 304 KB

english, 2012

38

The nonequilibrium inversion layer charge of the thin-film SOI MOSFET

Ortiz-Conde, A., Garcia Sanchez, F.J., Schmidt, P.E., Sa-Neto, A.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 554 KB

english, 1989

39

A new integration-based procedure to separately extract series resistance and mobility degradation in MOSFETs

Muci, Juan, Muñoz, Denise C Lugo, Rey, Álvaro D Latorre, Ortiz-Conde, Adelmo, García-Sánchez, Francisco J, Ho, Ching-Sung, Liou, Juin J

Journal:

Semiconductor Science and Technology

Year:

2009

Language:

english

File:

PDF, 129 KB

english, 2009

40

A generalized model for a two-terminal device and its applications to parameter extraction

A Ortiz-Conde, F.J García Sánchez, J.J Liou, J Andrian, R.J Laurence, P.E Schmidt

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 194 KB

english, 1995

41

Analysis of the validity of methods for extracting the effective channel length of short-channel LDD MOSFETs

Z. Latif, J.J. Liou, A. Ortiz-Conde, F.J. Garcia Sanchez, W. Wang, Y.G. Chen

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 206 KB

english, 1996

42

Evaluating MOSFET harmonic distortion by successive integration of the I–V characteristics

Ramón Salazar, Adelmo Ortiz-Conde, Francisco J. García-Sánchez, Ching-Sung Ho, Juin J. Liou

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 268 KB

english, 2008

43

Numerical Taxonomy and Nucleic Acid Studies of Vibrio mediterranei

Pujalte, Maria J., Ortiz-Conde, Betty A., Steven, Sue E., Esteve, Consuelo, Garay, Esperanza, Colwell, Rita R.

Journal:

Systematic and Applied Microbiology

Year:

1992

Language:

english

File:

PDF, 6.61 MB

english, 1992

44

[IEEE 2001 International Semiconductor Device Research Symposium. Symposium - Washington, DC, USA (5-7 Dec. 2001)] 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497) - An efficient and accurate procedure to evaluate distortion in SOI FD MOSFET

Cerdeira, A., Quintero, R., Estrada, M., Flandre, D., Ortiz-Conde, A., Garcia Sanchez, F.J.

Year:

2001

Language:

english

File:

PDF, 367 KB

english, 2001

45

Implementation of a comprehensive and robust MOSFET model in cadence SPICE for ESD applications

Gao, X.F., Liou, J.J., Bernier, J., Croft, G., Ortiz-Conde, A.

Journal:

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Year:

2002

Language:

english

File:

PDF, 389 KB

english, 2002

46

[IEEE 4th International Conference on Solid-State and IC Technology - Beijing, China (24-28 Oct. 1995)] Proceedings of 4th International Conference on Solid-State and IC Technology - Effective channel length of submicron MOSFETs: numerical simulation, physical mechanisms, and extraction methods

Narayanan, R., Ortiz-Conde, A., Liou, J.J., Sanchez, F.J.G., Parthasarathy, A.

Year:

1995

Language:

english

File:

PDF, 179 KB

english, 1995

47

[IEEE 6th International Conference on Solid-State and IC Technology - Shanghai, China (22-25 Oct. 2001)] 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) - A procedure to extract mobility degradation, series resistance and threshold voltage of SOI MOSFETs in the saturation region

Ortiz-Conde, A., Garcia Sanchez, F.J., Cerdeira, A., Estrada, M., Flandre, D., Liou, J.J.

Year:

2001

Language:

english

File:

PDF, 263 KB

english, 2001

48

Calculating double-exponential diode model parameters from previously extracted single-exponential model parameters

Liou, J.J., García Sánchez, F.J., Ortiz-Conde, A.

Journal:

Electronics Letters

Year:

1995

Language:

english

File:

PDF, 226 KB

english, 1995

49

A new approach to the extraction of single exponential diode model parameters

Ortiz-Conde, Adelmo, García-Sánchez, Francisco J.

Journal:

Solid-State Electronics

Year:

2018

Language:

english

File:

PDF, 964 KB

english, 2018

50

Exact analytical solution of channel surface potential as an explicit function of gate voltage in undoped-body MOSFETs using the Lambert W function and a threshold voltage definition therefrom

A. Ortiz-Conde, F.J. Garcı́a Sánchez, M. Guzmán

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 258 KB

english, 2003

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